features description applications ? high output power ? high reliability ? medium emission angle symbol parameter min max units p d power dissipation 360 mw i f continuous forward current 180 ma i p peak forward current 3.0 a v r reverse voltage 3 v t stg storage temperature -55 +125 c t o operating temperature -55 +125 c t s soldering temperature* +240 c symbol characteristic test conditions min typ max units p o output power i f = 100 ma 7.0 15 mw v f forward voltage i f = 100 ma 1.5 1.9 v ir reverse current vr = -3v 10 ua l p peak wavelength i f = 50 ma 865 880 895 nm l spectral halfwidth i f = 50 ma 80 nm r d dynamic resistance i f = 100ma 1.2 ohms t r rise time i f = 20 ma 0.6 us t f fall time i f = 20 ma 0.5 us c l l c c l c l anode & case header 880 nm led chip window cap (welded) ?.207 [5.3] .019 [0.48] cathode .035 [0.9] .047 [1.2] .030 [0.8] .045 [1.1] ?.180 [4.6] 45 ?.188 [4.8] ?.215 [5.5] ?.019 [0.5] typ 2x 1.000 [25.4] .015 [0.38] max .028 [0.7] max .192 [4.9] .214 [5.4] .223 [5.7] .257 [6.5] .100 [2.54] cathode gaalas high power ir led emitters PDI-E813 package dimensions inch [ mm ] to-46 can package the PDI-E813 is a high power gaalas infrared emitter, packaged in a hermetic to-46 metal header with a dome window glass. ? photoelectric switches ? infrared sources ? optical readers * 1/16 inch from case for 3 seconds max. electro - optical characteristics rating (ta) = 2 3 c unless otherwise noted information in this technical datasheet is believed to be correct and reliable. however, no responsibility is assumed for possi ble inaccuracies or omission. specifications are subject to change without notice. advanced photonix inc. 1240 avenida acaso, camar illo ca 93012 ? phone (805) 987-0146 ? fax (805) 484-9935 ? www.advancedphotonix.com absolute maximum rating (ta) = 2 3 c unless otherwise noted chip dimensions inch [mm]
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